肖洪地，男，教授，博士生导师
1990年9月考入山东大学，先后在应用化学专业、物理化学专业和材料物理与化学专业获得学士、硕士和博士学位。2010年-2011年在美国耶鲁大学做访问学者一年。目前，主要从事宽带隙半导体材料与器件、纳米材料与器件等方面的研究。累计在Nanoscale，Photonics Research， Applied Physics Letters等主流学术期刊上发表SCI收录论文近100篇。担任Nanoscale，ACS Applied Materials & Interfaces，Applied Surface Science等国际知名学术期刊的审稿工作；国家自然科学基金、山东省重点研发计划等项目通信评审专家；教育部学位与研究生教育发展中心研究生论文评审专家。
宽带隙半导体材料与器件
柔性半导体材料与器件
纳米半导体材料与器件
本科生课程：《力学》，《热学》，《大学物理》等
硕士研究生课程：《薄膜物理》
1. 国家自然科学基金项目：大面积可转移Beta-氧化镓单晶薄膜的制备及性质研究，项目号：61874067，研究期限：2019.01-2022.12，项目负责人。
2. 山东省重点研发计划：可用于下一代光电器件的Beta-氧化镓单晶薄膜的制备及性质研究，项目号： 2018GGX102024，研究期限：2018.01-2019.12，项目负责人。
3. 国家自然科学基金项目：具有纳米空腔的大面积柔性GaN基LED的制备及特性研究, 项目号：61376069，研究期限：2014.01-2017.12，项目负责人。
4. 山东省科技攻关计划：尺寸可控的柔性GaN基纳米薄膜的制备及特性研究，项目号： 2017GGX 10228，研究期限：2018.01-2019.12，项目负责人。
5. 南水北调办公室项目：南四湖和东平湖藻类的降解及降解机理的研究，研究期限：2013.01-2013.12，项目负责人。
6. 山东省博士基金：Si(111)衬底有序GaN/Ga2O3径向纳米线异质结构的制备及性质研究，项目号： 2008BS04005，研究期限：2008.01-2010.12，项目负责人。
7. 国家博士后基金：有序GaN/Ga2O3径向纳米线异质结构的电子能态和声子能态结构的研究，项目号： 20080441141，研究期限：2008.01-2009.12，项目负责人。
8. 山东省博士后基金：GaN/Ga2O3核壳纳米线垂直阵列的制备及相关性质的研究，项目号： 2009TS099，研究期限：2008.01-2009.12，项目负责人。
自2012年以来，以第一作者或通讯作者发表SCI收录论文如下：
2018年
1. Dezhong Cao, Xiaokun Yang, Lvyang Shen, Chongchong Zhao, Caina Luan, Jin Ma, Hongdi Xiao*, Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirror, Photonics Research, 2018, 6:1144-1150
2. Xiaokun Yang, Hongdi Xiao*, Dezhong Cao, Lvyang Shen, Jin Ma, Fabrication, annealing, and regrowth of wafer-scale nanoporous GaN distributed Bragg reflectors, Scritpta Materialia, 2018, 156: 10-13
2017年
3. Dezhong Cao, Hongdi Xiao*, Qingxue Gao, Xiaokun Yang, Caina Luan, Jianqiang Liu, Xiangdong Liu, Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers, Nanoscale, 2017, 9: 11504-11510
4. Qingxue Gao, Hongdi Xiao*, Dezhong Cao, Xiaokun Yang, Jianqiang Liu, Hongzhi Mao, Jin Ma, Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte, Journal of Alloys and Compounds, 2017, 722: 767-771
5. Dezhong Cao, Hongdi Xiao*, Jiacheng Fang, Jianqiang Liu, Qingxue Gao, Xiangdong Liu, Jin Ma, Photoelectrochemical water splitting on nanoporous GaN thin films for energy conversion under visible light，Materials Research Express, 2017, 4: 015019
6. Jishi Cui, Dezhong Cao, Qingxue Gao, Xiaokun Yang, Jianqiang Liu, Jin Ma, Hongdi Xiao*, Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy，Materials Letters, 2017, 208: 31-34
7. Dezhong Cao, Rong Liu, Hongdi Xiao*, Qingxue Gao, Xiaokun Yang, Jianqiang Liu, Xiangdong Liu, Photoluminescence properties of etched GaN-based LEDs via UV-assisted electrochemical etching, Materials Letters, 2017, 209: 555-557
2016年
8. Qingxue Gao，Rong Liu，Hongdi Xiao*，Dezhong Cao, Jianqiang Liu, Jin Ma, Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties, Applied Surface Science, 2016, 387: 406-411
9. Dezhong Cao，Hongdi Xiao*, Hangzhou Xu，Qingxue Gao, Jin Ma, Xiangdong Liu, Haiyan Pei, Depth detection and fabrication of porous silicon without the stress, Applied Surface Science, 2016, 362: 557-561
2015年
10. Dezhong Cao，Hongdi Xiao*，Hongzhi Mao，Houyi Ma，Qingxue Gao，Jianqiang Liu，Jin Ma，Xiangdong Liu, Electrochemical characteristics of n-type GaN in oxalic acid solution under the pre-breakdown condition, Journal of Alloys and Compounds, 2015, 652: 200-204
11. Jishi Cui, Hongdi Xiao*, Dezhong Cao，Ziwu Ji，Jin Ma, Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy，Journal of Alloys and Compounds, 2015, 626: 154-157
12. Dezhong Cao，Hongdi Xiao*，Hangzhou Xu，Jishi Cui，Qingxue Gao，Haiyan Pei, Enhancing the photocatalytic activity of GaN by electrochemical etching, Materials Research Bulletin, 2015, 70: 881-886
13. Hongdi Xiao*，Jishi Cui，Dezhong Cao，Qingxue Gao，Jianqiang Liu，Jin Ma, Self-standing nanoporous GaN membranes fabricated by UV-assisted electrochemical anodization, Materials Letters, 2015, 145: 304-307
14. Hangzhou Xu, Haiyan Pei, Hongdi Xiao, Wenrong Hu, Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light, AIP Advances 2015，5: 067125
2014年以前部分SCI论文
15. Jishi Cui, Hongdi Xiao*，Jianqiang Liu，Caina Luan, Ziwu Ji, Haiyan Pei, Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition, Journal of Alloys and Compounds, 2013, 563: 72-76
16. Hongd Xiao*, Jianqiang Liu, Caina Luan, Ziwu Ji, Jishi Cui, Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers, Applied Physics Letters, 2012,100: 213101
17. Hongd Xiao*, Haiyan Pei, Jianqiang Liu, Jishi Cui, Bo Jiang, Qingjie Hou, Wenrong Hu, Fabrication,characterization, and photocatalysis of GaN-Ga2O3 core-shell nanoparticles, Materials letters, 2012, 71: 145-147
18. Danti Chen, Hongdi Xiao*, Jung Han*, Nanoporoes in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism, Journal of Applied Physics, 2012,112: 064303
招生情况
每年招收硕士研究生1-2名，博士研究生1名。
通讯地址：济南市 山大南路27号 山东大学光电材料与器件研究所
邮政编码：250100
联系电话：0531 88364329-8304
电子邮箱：hdxiao@sdu.edu.cn
