辛倩，1982年1月出生，山东潍坊人，山东大学“青年学者未来计划”获得者，副研究员，博士生导师，纳电子中心副主任。主要从事半导体材料与器件领域的相关研究，迄今已发表了包括Nature Communications, Physical Review Letters, Advanced Materials，IEEE Electron Device Letters，Applied Physics Letters等国际高影响力学术论文30余篇，参与撰写了一部Springer国际学术著作，近5年主持了十余项国家、省部级等科研项目，骨干参与了国家重点研发计划、国家军工973等重大项目。受邀为多个SCI期刊审稿。
教育经历
1999.9 - 2003.6，山东大学 材料科学与工程学院，学士
2003.9 – 2008.12，山东大学，晶体材料国家重点实验室，博士
工作经历
2009 - 2012，日本 千叶大学，博士后
2012 - 2016，山东大学，物理学院，纳电子中心，副研究员
2016 - 今，山东大学，微电子学院，纳电子中心，山东大学“青年学者未来计划”，副研究员。
微纳电子器件
p型氧化物半导体与器件
柔性半导体与薄膜电子
功能集成电子电路
1. 国家重点研发计划，微腔调控的新型太赫兹量子器件，2016-2021，752万元，项目骨干；
2. 国家973计划， 2013-2017，200万元，项目骨干；
3. 国家自然科学基金，关于掺杂实现有效p型金属氧化物半导体及其导电机理的探索，2014-2016，25万，主持；
4. 山东大学“青年学者未来计划”，2016-2021，50万，主持；
5. 山东省自然科学基金，柔性氧化物薄膜器件，2018-2020，主持；
6. 山东省自然科学基金，基于SnO的p型氧化物半导体的开发与能带结构研究，2013-2016，主持；
7. 江苏省自然科学基金， 2015-2018，主持；
8. 深圳市科创委自由探索项目，2018-2012，主持；
9. 苏州市产业技术创新专项-应用基础研究，2015-2018，主持；
10. 中国博士后科学基金，2016-2018，主持；
11. 山东大学自主创新基金，高迁移率SnO基p型氧化物半导体的开发， 2014-2015，主持；
12. 横向课题，柔性衬底上氧化物半导体薄膜的电性能调制技术，2017-2019，主持。
1. Lulu Du, Qian Xin*, Mingsheng Xu*, Yaxuan Liu, Wenxiang Mu, Shiqi Yan, Xinyu Wang, Gongming Xin, Zhitai Jia*, Xu-Tang Tao*, Aimin Song, High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact, IEEE Electron Device Letters, accepted (2019).
2. Yunpeng Li, Jiawei Zhang, Jin Yang, Yvzhuo Yuan, Zhenjia Hu, Zhaojun Lin, Qian Xin*, and Aimin Song*, Complementary Integrated Circuits based on N- and P-Type Oxide Semiconductors for Applications beyond Flat-Panel Displays, IEEE Transactions on Electron Devices, accepted (2019).
3. Jin Yang, Yuzhuo Yuan, Yunpeng Li, Lulu Du, Yiming Wang, Zhenjia Hu, Qingpu Wang, Li Zhou*, Qian Xin*, and Aimin Song, All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory, IEEE Electron Device Letters, 39(12) 1876-1879 (2018).
4. Yaxuan Liu, Lulu Du, Guangda Liang, Wenxiang Mu, Zhitai Jia, Mingsheng Xu*, Qian Xin*, Xutang Tao*, and Aimin Song, Ga2O3 field-effect-transistor-based solar-blind photodetector with fast response and high photo-to-dark current ratio, IEEE Electron Device Letters, 39(11), 1696-1699 (2018).
5. Yuzhuo Yuan, Jin Yang, Zhenjia Hu, Yunpeng Li, Lulu Du, Yiming Wang, Li Zhou, Qingpu Wang, Aimin Song, and Qian Xin*, Oxide-based Complementary Inverters with High Gain and NanoWatt Power Consumption, IEEE Electron Device Letters, 39(11), 1676-1679 (2018).
6. Lulu Du, Jiawei Zhang, Yunpeng Li, Mingsheng Xu, Qingpu Wang, Aimin Song, and Qian Xin*, High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO, IEEE Transactions on Electron Devices, 65(10), 4326-4333 (2018).
7. Lulu Du, Dandan He, Yaxuan Liu, Mingsheng Xu, Qingpu Wang, Qian Xin*, and Aimin Song, Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte, IEEE Electron Device Letters, 39(9), 1334-1337 (2018).
8. Yunxiu Qu, Jia Yang,Yunpeng Li, Jiangwei Zhang, Qingpu Wang, Aimin Song, and Qian Xin*,Organic and Inorganic Passivation of p-type SnO Thin-Film Transistors with Different Active Layer Thickness, Semiconductor Science and Technology, 33(7), 075001 (2018).
9. Guangda Liang, Yiming Wang, Lin Han, Zai-Xing Yang, Qian Xin*; Zakhar R Kudrynskyi, Zahar D Kovalyuk, Amalia Patane, and Aimin Song* , Improved performance of InSe field-effect transistors by channel encapsulation, Semiconductor Science and Technology, 33(6), 06LT01/1-06LT01/5 (2018).
10. Yunpeng Li, Jia Yang, Yunxiu Qu, Jiawei Zhang, Li Zhou, Zaixing Yang, Zhaojun Lin, Qingpu Wang, Aimin Song*, and Qian Xin*, Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power, Applied Physics Letters, 112, 182102 (2018).
11. Yiming Wang, Jin Yang, Hanbin Wang, Jiawei Zhang, He Li, Gengchang Zhu, Yanpeng Shi, Yuxiang Li, Qingpu Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, and Aimin Song, Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions, IEEE Transactions on Electron Devices, 65(4), 1377-1382, 2018.
12. Jin Yang, Yiming Wang, Yunpeng Li, Yuzhuo Yuan, Zhenjia Hu, Pengfei Ma, Li Zhou, Qingpu Wang, Aimin Song, and Qian Xin*, Highly Optimised Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity, IEEE Electron Device Letters, 39(4), 516-519, April (2018).
13. Yunpeng Li, Jin Yang, Yiming Wang, Pengfei Ma, Yvzhuo Yuan, Jiawei Zhang, Zhaojun Lin, Li Zhou, Qian Xin*, and Aimin Song*, Complementary Integrated Circuits Based on p-type SnO and n-type IGZO Thin-Film Transistors, IEEE Electron Device Letters, 39(2), 208-211 (2018).
14. Xiaochen Ma, Jiawei Zhang, Wensi Cai, Hanbin Wang, Joshua Wilson, Qingpu Wang, Qian Xin*, and Aimin Song*, “A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors”, Scientific Reports, 7:809 (2017).
15. Jiawei Zhang, Jia Yang, Yunpeng Li, Joshua Wilson, Xiaochen Ma, Qian Xin*, and Aimin Song*, “High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors”, Materials, 10, 319 (2017).
16. Lulu Du, He Li, Linlong Yan, Jiawei Zhang, Qian Xin*, Qingpu Wang, and Aimin Song*, Effects of substrate and anode metal annealing on InGaZnO Schottky diodes, Applied Physics Letters, 110, 011602 (2017).
17. Yunpeng Li, Qian Xin*, Lulu Du, Yunxiu Qu, He Li, Xi Kong, Qingpu Wang, and Aimin Song*, Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power, Scientific Reports, 6:36183 (2016).
18. Qian Xin*, Linlong Yan, Lulu Du, Jiawei Zhang, Yi Luo, Qingpu Wang, and Aimin Song*, Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes, Thin Solid Films, 616, 569-572 (2016).
19. Jiawei Zhang, Xi Kong, Jia Yang, Yunpeng Li, Joshua Wilson, Jie Liu, Qian Xin*, Qingpu Wang, and Aimin Song*, Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics, Applied Physics Letter, 108, 263503 (2016).
20. Linlong Yan, Qian Xin*, Lulu Du, Jiawei Zhang, Yi Luo, Qingpu Wang, and A. Song*, High performance InGaZnO-based Schottky diodes fabricated at room temperature, Physica Status Solidi C, 13, No. 7-9, 618-622 (2016).
21. Jiawei Zhang, Yunpeng Li, Binglei Zhang, Hanbin Wang, Qian Xin*, and Aimin Song*, Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz, Nature Communications, 6, 7561 (2015).
22. Qian Xin, Linlong Yan, Yi Luo, and Aimin Song*, Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode, Applied Physics Letters, 106, 113506 (2015).
23. Qian Xin *, Steffen Duhm, Fabio Bussolotti, Y. Kubozono, H. Aoki, T. Kosugi, Satoshi Kera, and Nobuo Ueno*, Accessing surface Brillouin zone and band structure of picene single crystals, Physical Review Letters, 108, 226401(2012).
24. Steffen Duhm*, Qian Xin, Shunsuke Hosoumi, H. Fukagawa, K.Sato, Nobuo Ueno, and Satoshi Kera*, Charge Reorganization Energy and Small Polaron Binding Energy of Rubrene Thin Films by Ultraviolet Photoelectron Spectroscopy, Advanced Materials，24，901-905 (2012).
25. Qian Xin*, Steffen Duhm, Shunsuke Hosoumi, Nobuo Ueno, Xu-Tang Tao, and Satoshi Kera, Impact of nitrogen substitution on the electronic structure and molecular arrangement of heteroacene films, The Journal of Physical Chemistry C, 115, 15502-15508 (2011).
26. Qian Xin, Xu-Tang Tao, Jian-Liang Sun, De-Chun Zou, Fa-Jun Wang, Hui-Jun Liu, Yan Ren, Min-Hua Jiang, Fluorene-based Tröger’s base analogues: Potential electroluminescent materials/Organic Electronics, Organic Electronics, 9, 1076-1086 (2008).
27. Qian Xin, Xu-Tang Tao, Hui-Jun Liu, Yan Ren, Min-Hua Jiang, Synthesis, structure and packing properties of three Tro ̈ger’s base analogues containing substituted fluorene units, CrystEngComm, 10, 1204-1210 (2008).
专著
Y. Nakayama, S. Duhm, Q. Xin, S Kera, H Ishii, and N. Ueno, Chapter 2: Ultraviolet photoelectron spectroscopy (UPS) I: Band dispersion measurement of “insulating” organic single crystals. Book: Electronic Processes in Organic Electronics, Springer Series in Materials Science, 209, pp. 11-26, (2015).
1、2016年5月，获山东大学“青年学者未来计划”。
2. 2018年，山东省研究生教学成果奖二等奖。
3. 2018年，Young Scientist Award Finalist of Microsystem & Nanoengineering Summit 2018。
研究平台简介
山东大学纳电子工程研究中心，简称“纳电子中心”，由宋爱民教授于2012年初领衔组建，是山东大学纳电子技术创新、技术成长的摇篮，也是纳电子科技推广应用的基石。中心拥有国际一流的硬件设备，包括目前世界加工精度最高的7nm的纳米加工平台和国内频率最高的750GHz的太赫兹测试平台，研究能力已全面接轨国际领先水平。承担了5项国家重点研发计划、1项国家军工973项目、1项国家国防重点项目和其它30余项国家自然科学基金和省部级项目，总科研经费超过3500万元。中心研发方向属于国际社会急需的纳电子前沿领域，目前已经取得了一系列高水平研究成果（包括Nature Communications、Nano Letters、ACS Nano等），在国内外纳电子领域具有很强的影响力。
招生招聘
热烈欢迎具有微电子、物理、材料专业背景的同学报考纳电子中心硕士及博士研究生！每年计划招收2名硕士研究生和1名博士研究生。热烈欢迎校内本科生加入纳电子中心从事科研工作！纳电子中心团队常年招聘研究人员，详情请见
http://www.nano.sdu.edu.cn/zs_zp.htm
通信地址：山大南路27号山东大学中心校区明德楼C座811
联系电话：0531-88362221
电子邮箱：xinq@sdu.edu.cn
