The Micro-Nano Wide Bandgap and Flexible Electronic Devices Group was established in February 2019 to develop new generation electronic devices. The research areas include:

Nano high-frequency devices. This research field covers new materials (two-dimensional materials and metamaterials), simulation calculations, nanotechnology, high-frequency devices and circuits, which can be used for detectors and signal sources, dynamic control of space waves and surface waves, and integrated circuits & modules, and application in new generation imaging/radar/communication systems.

Wide bandgap semiconductor devices. This research field covers wide bandgap semiconductor devices (e.g. power devices, optoelectronic devices, switching devices, memory, sensor devices), design technology, process technology, as well as device physics and reliability. It aims at solving problems and difficulties of new materials, new processes, new devices and integration technology in the field of new generation of semiconductor electronic devices.

Flexible electronic devices. This research field covers flexible optoelectronic materials, semiconductor properties, device physical mechanisms, device technology and integration. The technology is widely applied in the fields of wearable electronics, information display, artificial intelligence, storage computing, data encryption, biological sensing, health care, etc.

The group is equipped with world-class nanofabrication and characterization platforms, including a 7nm line width electron beam exposure system, an ultra-high frequency terahertz detection equipment (750GHz), a low temperature and strong magnetic field test system (4K-500K), several thin film growth systems (e.g. conductors, insulators, and semiconductors), a thin film surface morphology analysis & test platform, and an electrical and optical performance analysis & test platform. The group aims to facilitate the development of cutting-edge optoelectronics and related technologies in the world.