1. Instrument name: Dry EtchingSsystem

Model: PlasmaPro® 100 Cobra

Manufacturer: Oxford Instruments

2. The mainfunctionof the instrument

The dry etching system with both ICP mode and RIE mode is used for dry etching on semiconductors and other materials. Currently available materials: IGZO, InGaAs, GaAs, InP, GaN, SiO₂.

3. Main Specifications

ICP power: up to 3000 W, frequency: 13.56 MHz

Low electrode power: up to 300 W, frequency: 13.56 MHz

Background vacuum:＜4 × 10^-6Torr; Ultimate vacuum: 3 × 10^-7Torr

9process gas lines: CH₄; H₂; BCl₃; Cl₂; SiCl₄; O₂; SF₆; CHF₃; Ar

4. Sample requirements (if any)

The sample size should be less than 2 inches, and metal materials cannot be etched