1. Instrument name: Atomic Layer Deposition System

Model and specification: TALD-150A

Manufacturer: Jiaxing Kemin

2. Main Specifications

Substrate heating temperature: room temperature~400°C;

Number of precursor sources: Al source, Hf source, Ti source, Si source;

Axial temperature of precursor: room temperature~200℃, control accuracy ±1℃;

ALD valve: Swagelok fast high temperature ALD special valve;

Background vacuum: <5×10-3 Torr, high-performance mechanical pump;

Deposition non-uniformity: Al2O3 non-uniformity <±1%.