Recently,Qian Xin’s research group collaborated with theUniversity of Manchestermadesignificantprogressin the field of oxide semiconductor thin film electronics. The team developed high-performance p-type SnO thin film transistors (TFTs), which isoneof the key challenges in the field of oxide semiconductors, and successfully realized complementary circuits integration based on p-type SnO and n-type IGZO TFTs. High performance thin film CMOS circuits including inverters, various basic logic gates, ring oscillators, SRAM, D-Latch, 1 bit full adders with high noise margin levels and record high voltage gains have been developed. The power consumption can be as low as pW level, ideal for wearable and portable electronics. The integration level (104 TFTs) has reached the highest international level of similar circuits.These achievements provide core devices, circuits and technologies for the construction of flexible displays, flexible logic chips, electronic skins and other electronic products that people have long dreamed of.
The related publications are as follows:
1)Y. Li, J. Yang, Y. Wang, P. Ma, Y. Yuan, J. Zhang, Z. Lin, L. Zhou, Q. Xin*, A. Song*,Complementary Integrated Circuits Based on p-type SnO and n-type IGZO Thin-Film Transistors,IEEE Electron Dev. Lett.39, 208-211 (2018).
2)J. Yang, Y. Wang, Y. Li, Y. Yuan, Z. Hu, P.i Ma, L. Zhou, Q. Wang, A. Song, Q. Xin*, Highly Optimised Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity,IEEE Electron Dev. Lett.39, 516-519, (2018). (Editor’s Picks)
3)J. Yang, Y. Yuan, Y. Li, L. Du, Y. Wang, Z. Hu, Q. Wang, L. Zhou*,Q. Xin*, A. Song,All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory,IEEE Electron Dev. Lett.39, 1876-1879(2018).
4)Y. Yuan, J. Yang, Z. Hu, Y. Li, L. Du, Y. Wang, L. Zhou, Q. Wang, A. Song, Q. Xin*, Oxide-basedComplementary Inverters with High Gain and NanoWatt Power Consumption,IEEE Electron Dev. Lett.39, 1676-1679 (2018). (SCI,IF = 3.753,Q1) (Editor’s Picks)
5)Y. Li, J. Zhang, J. Yang, Y. Yuan, Z. Hu, Z. Lin, A. Song, Q. Xin*, Complementary Integrated Circuits based on N- and P-Type Oxide Semiconductors for Applications beyond Flat-Panel Displays,IEEE Trans. Electron Dev.66, 950-956(2019).
