Recently, high performance thin film transistors (TFTs) based on sputtered In-Al-Zn-O (IAZO) channel layer were fabricatedby Professor Xianjin Feng’s group.IAZO is a potential and promising alternative for the extensively studied IGZO to be used in TFTs.The post-annealed IAZO film exhibited excellent properties including a low surface roughness, a very high Hall mobility of 74.2 cm²/Vs, a high average transmittance over 95% in the visible range, and a wide optical band gap of 4.1 eV. The TFT with Au electrodes exhibited a highμ_satof 20.57 cm²/Vs and a highI_on/I_offratio of 4.02×10⁷. Whereas the TFT with Ti electrodes showed a lowerμ_satof 9.54 cm²/Vs, but a higherI_on/I_offratio of 7.39×10⁷, as well as a lowerSSand a much lower hysteresis.This study has been published in the reputed journal of IEEE Electron Devices Letters and demonstrated the great potential of IAZO TFTs to be used in the next-generation electronics and optoelectronics.