Based on the heteroepitaxial growth of high quality anatase titania(a-TiO₂)single crystal filmson MgAl₆O₁₀(100) substrates by metalorganic chemical vapor deposition (MOCVD),the research group of Professor Ma Jin from the School of Microelectronics successfully prepared single crystal TiO₂-based thin film transistors(TFTs),which is of great significancefor the development ofsingle crystal a-TiO₂film materials in device applications. Relevant research results have been published on IEEE TRANSACTIONS ON ELECTRON DEVICES, with the article title of “Fabrication and Characterization ofHigh-Performance Thin-Film TransistorsBased on Epitaxial Ta-Doped TiO₂Films”.

Ph.D.Zhao Weifrom class 2016is the first author. Professor Ma Jin, researcher LvYuanjie and associate researcher Feng Xianjin are the corresponding authors.Shandong University ranked first among the completed units.Single crystal a-TiO₂films have the advantages of high dielectric constant, few defects and high carrier mobility, which are more conducive to the fabrication of high-performance optoelectronic devices.Thepreparation of a-TiO₂single crystal filmmay lay a foundation for the manufacture of a-TiO₂basedhigh-performance TFTs, MOSFETsand ultraviolet detectors. This work manifest thatsingle crystal a-TiO₂film is a promising active-channel material for MOxTFTs.