Influence of polarization Coulomb field scattering on the electrical properties of small-sized devices

Theresearch groupof Professor Zhaojun Linin the GaN-based electronic device researcheshasproposed and established a new carrier scattering theory: polarization coulomb field scattering(PCFScattering) theory. Someimportantresearchresults have beenachievedfor the PCF scattering theory.It is found that thePCFscattering is an important constraint for the improvement of high-frequency and high-power characteristics of GaN-based electronic devices. The optimization of GaN-based electronic device structures based onPCFscattering theory is expected to become an important design rule for GaN-based electronic devices andtherelated functional modules.ThePCF scattering theoryis used in the study ofthenonlinear distortion of GaN-based power amplifiersand theGaN power switchingdevices. It isfound that optimizingthe device structure by the PCF scattering theory canimprove the linear characteristics of GaN-based power amplifiersand theGaN power switching characteristics.

Ourresearch group has formed its own characteristic in the research field of GaN-based electronic devices, and is at the forefront of the international research direction.The published relatedSCI papernumberis more than 60,of which more than 20 have been published intheimportant international professional journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Trans. Electron Devices., Scientific Reports.