林兆军，教授，博士生导师。1999年10月到2003年9月，分别在加拿大和美国多所大学从事科学研究工作:在加拿大 McMaster University电子工程系，开展 InGaAsP-InP 多量子阱激光器的研究工作;在美国Northwestern University量子器件研究中心，从事GaInAs/AlInAs 量子级联激光、GaN 基蓝激光和发光管等方向的研究工作;在美国 Ohio State University 电子工程系，从事 AlGaN/GaN 异质结场效应晶体管的研究工作。1997年9月到1999年9月，在北京大学微电子研究所做博士后研究，从事GaN电子器件研究。1988年7月到1994年8月，在河北大学电子系担任教师。

从美国回国后，自2003年12月来山东大学工作，现任山东大学微电子学院常务副院长，兼任中国电子学会半导体与集成技术分会委员、山东省电子学会电子元件与材料专业委员会主任委员。主要从事微电子学与固体电子学专业研究，具体研究方向：GaN电子器件、低维材料与器件、半导体光电子器件。自来山东大学以来已主持多项国家自然科学基金项目、省部级项目、军工项目和横向项目。作为第一作者和通讯作者发表SCI收录论文60多篇，其中超过20篇发表在Applied Physics Letters、Journal of Applied Physics、IEEE Trans. Electron Devices.、Scientific Reports 国际重要核心专业期刊。

教育经历：

1994/09-1997/07,中国科学院半导体所，博士

研究方向介绍：

  GaN 是第三代半导体材料的杰出代表，其在高频、大功率半导体芯片领域应用市场巨大； GaN 电子器件是电力电子和微波射频器件的“核芯”，是全球战略竞争新的制高点。近些年来，我们研究组在GaN 电子器件研究中，提出并建立了 GaN 电子器件一种新的载流子散射理论：极化库仑场散射。并将极化库仑场散射理论用于 GaN 电子器件性能研究中取得重要研究成果：研究发现极化库仑场散射是 GaN 电子器件高频、大功率特性提升的重要制约因素，基于该散射理论优化GaN 电子器件材料和器件结构有望成为GaN 电子器件重要设计规则； 将极化库仑场散射理论用于GaN 功率放大器非线性失真问题研究，研 究发现极化库仑场散射对 GaN 电子器件栅源寄生电阻和器件跨导有重要影响，结合极化库仑场散射理论优化器件结构可在器件层级提高GaN 功率放大器线性特性。我们研究组在 GaN 电子器件研究中，形成了自己的特色，并处在了国际该研究方向的前沿。

Peng Cui, Yuanjie Lv, Huan Liu, Aijie Cheng, Chen Fu, and Zhaojun Lin*(*通讯作者)Scientific Reports, 8, 983 (2018).

[2] Influence of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Peng Cui, Mojiang Hui, Chen Fu, Yuanjie Lv, Huan Liu, Aijie Cheng, Chongbiao Luan, Yang Zhou, Gang Dai, and Zhaojun Lin* Scientific Reports ,8, 9036 (2018)

[3] Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-length AlGaN/GaN HEMTs

Peng Cui, Yuanjie Lv, Chen Fu, Huan Liu, Aijie Cheng, Chongbiao Luan, Yang Zhou,and Zhaojun Lin* Scientific Reports, 8, 12850 (2018)

[4] Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors

MingYang, YuanjieLv, PengCui, YanLiu, ChenFu,,and ZhaojunLin* Journal of Physics and Chemistry of Solids, Volume 123, 223,(2018)

[5] Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors,

Peng Cui, Zhaojun Lin*, Chen Fu, Yan Liu, and Yuanjie Lv Applied physics A-Materials Science & Processing, 124:359 (2018)

[6] A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

Chen Fu, Zhaojun Lin*, Peng Cui, Yuanjie Lv, Yang Zhou, Gang Dai, ChongbiaoLuan, Huan Liu, Aijie Cheng Superlattices and Microstructures, 113, 160 (2018).

[7] Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Peng Cui, Huan Liu, Wei Lin, Zhaojun Lin*, Aijie Cheng, Ming Yang, Yan Liu, Chen Fu, Yuanjie Lv, and Chongbiao Luan IEEE Transactions on Electron Devices, 64, 1038 (2017).

[8] A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Peng Cui, Zhaojun Lin*, Chen Fu, Yan Liu, and Yuanjie Lv Superlattices and Microstructures, 110, 289 (2017). (selected as research highlights in Advances in Engineering)

[9] Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Yan Liu, Zhaojun Lin*, Peng Cui, Jingtao Zhao, Chen Fu, Ming Yang, and Yuanjie Lv AIP ADVANCES 7, 085309 (2017).

[10] Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

Chen Fu, Zhaojun  Lin*, Yan Liu, Peng Cui, Yuanjie Lv, Yang Zhou, Gang Dai, Chongbiao Luan Superlattices and Microstructures, 111, 806 (2017).

[11] Effect of polarization Coulomb field scattering on device linearity in  AlGaN/GaN heterostructure field-effect transistors

Peng Cui, Yuanjie Lv, Zhaojun Lin*, Chen Fu, and Yan Liu Journal of Applied Physics, 122, 124508 (2017).

[12] Study of the parasitic source resistance at the different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Yan Liu, Zhaojun Lin*, Yuanjie Lv, Peng Cui, Chen Fu, Ruilong Han, Yu Huo, and Ming Yang Chinese Physics B, 26, 097104 (2017).

[13] Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

Peng Cui, Zhaojun Lin*, Chen Fu, Yan Liu, and YuanJie Lv Chinese Physics B, 26, 127102 (2017).

[14] Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering Ming Yang, Yuanjie Lv, Zhihong Feng, Wei Lin, Peng Cui, Yan Liu, Chen Fu, and Zhaojun Lin* IEEE Transactions on Electron Devices, 63, 3908 (2016).

[15] Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

Peng Cui, Huan Liu, Zhaojun Lin*, Aijie Cheng, Yan Liu, Chen Fu, Yuanjie Lv, Zhihong Feng, Chongbiao Luan Superlattices and Microstructures, 100, 358 (2016).

[16] Effect of Polarization Coulomb field scattering on parasitic source access resistance and extrinsic transconductance in AlGaN/GaN heterostructure FETs.

Ming Yang, Zhaojun Li*, Jingtao Zhao, Peng Cui, Chen Fu, Yuanjie Lv, and Zhihong Feng,，IEEE Transactions on Electron Devices , Vol.63, 1471 (2016).

[17] Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostruceure field-effect transistors

Ming Yang, Yuanjie Lv, Zhihong Feng, Wei Lin, Peng Cui, Yan Liu, Chen Fu, Zhaojun Lin*, Journal of Applied Physics, Vol.119, 224501 (2016).

[18] A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Jingtao Zhao, Zhaojun Lin*, Quanyou Chen, Ming Yang, Peng Cui, Yuanjie Lv, and Zhihong Feng, Applied Physics Letters, Vol. 107, 113502 (2015).

[19] Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Jingtao Zhao, Zhaojun Lin*, Chongbiao Luan, Yang Zhou, Ming Yang, Yuanjie Lv, and Zhihong Feng，Applied Physics Letters, Vol.105, 083501(2014).

[20] Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin*, Yuanjie Lv, Jingtao Zhao, Yutang Wang, Hong Chen, and Zhanguo Wang, Journal of Applied Physics, Vol.116, 044507(2014).

[21] Influence of the side-Ohmic contact processing on the polarization Coulomb  field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin*, Yuanjie Lv, Lingguo Meng, Yingxiao Yu, Zhifang Cao, Hong Chen，Zhanguo Wang, Applied Physics Letters, Vol.101, 113501（2012）

[22] Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhaojun Lin*, Lingguo Meng, Chongbiao Luan, Zhifang Cao, Yingxiao Yu, Zhihong Feng and Zhanguo Wang, Nanoscale Research Letters,Vol.7, 434 (2012)

[23] Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN  heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin*, Zhihong Feng, Lingguo Meng, Yuanjie Lv, Zhifang Cao, Yingxia Yu, Zhanguo Wang, Journal of Applied Physics, Vol.112, 054513 (2012)

[24] Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage    from forward Current-Voltage characteristics

Yuanjie Lv, Zhaojun Lin,* Lingguo Meng, Yingxia Yu,Chongbiao Luan,Zhifang Cao, Hong Chen, Baoquan Sun, and Zhanguo Wang, Applied Physics Letters, Vol.99,123504 (2011)

[25] Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhaojun Lin,* Yu Zhang, Lingguo Meng, Chongbiao Luan, Zhifang Cao,1 Hong Chen, and Zhanguo Wang, Applied Physics Letters, Vol.98, 123512 (2011)

[26] Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Yuanjie Lv, Zhaojun Lin,* Timothy D. Corrigan, Jianzhi Zhao,Zhifang Cao, Lingguo Meng, Chongbiao Luan,Zhanguo Wang, and Hong Chen, Journal of Applied Physics, Vol.109, 074512 (2011)

[27] The influence of Schottky contact metals on the strain of AlGaN barrier layers Zhaojun Lin*, Jianzhi Zhao, Timothy Corrigan, Zhen Wang, Zhidong You, Zhanguo Wang, Wu lu, Journal of Applied Physics, Vol.103, 044503 (2008)

[28] Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures

Jianzhi Zhao, Zhaojun Lin*, Timothy Corrigan, Zhen Wang, Zhidong You, Zhanguo Wang, Applied Physics letters, Vol.91, 173507(2007).

[29] Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures

Zhaojun Lin*, Wu Lu, Journal of Applied Physics, Vol.99, 014504 (2006).

[30] Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu, Applied Physics Letters, Vol.84, 1585 (2004).

[31] Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions

毕业生去向：

  共培养研究生 40 余名，研究生毕业后主要集中在研究所(中国工程物理研究院、中国电子科技集团、中国航天科技集团等)、大型公司(华为、中兴、浪潮等)以及国内高校；以下为近七年研究生毕业去向。